Performance tecnicall Specifications
- Sequential Read Speed: Up to 3,500 MB/s.
- Sequential Write Speed: Up to 3,000 MB/s.
- Interface: PCIe Gen3.0 x4, NVMe 1.3 protocol.
- IOPS (Random 4K): Up to 188K (Read) and 156K (Write).
Physical & Environmental Specs
- Form Factor: M.2 2280.
- Dimensions: 80mm x 22mm x 3.5mm.
- Weight: Approximately 9g.
- Operating Temperature: 0°C to 70°C.
- Storage Temperature: -40°C to 85°C.
- Shock Resistance: 1500G / 0.5ms.
- Thermal Management: Equipped with a low-profile graphene aluminum heat spreader to maintain performance under heavy workloads.
Reliability & Technology
- NAND Flash Type: 3D TLC NAND.
- Controller: Silicon Motion (SMI) controller.
- Endurance (TBW): 284 Terabytes Written (TBW) for the 512GB model.
- MTBF (Mean Time Between Failures): 1.5 million hours.
- Features Support: TRIM command, S.M.A.R.T. monitoring, NCQ, and Error Correction Code (ECC) technology.